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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF5003/D
The RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode
The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment. * Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 3.0 Watts Power Gain = 9.5 dB Efficiency = 45% * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * All Gold Metal for Ultra Reliability * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2.0 dB Overdrive * Suitable for 12.5 Volt Applications * True Surface Mount Package * Available in Tape and Reel by Adding R1 Suffix to Part Number. R1 Suffix = 500 Units per 16 mm, 7 inch Reel. * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF5003
3.0 W, 7.5 V, 512 MHz N-CHANNEL BROADBAND RF POWER FET
CASE 430-01, STYLE 2
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 Meg Ohm) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 36 36 20 1.7 12.5 0.07 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 14 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
MRF5003 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 2.5 mAdc) Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 36 -- -- -- -- -- -- 1.0 1.0 Vdc mAdc Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 5.0 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 0.5 Adc) VGS(th) VDS(on) gfs 1.25 -- 0.6 2.25 -- -- 3.5 0.375 -- Vdc Vdc mho
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- 3.5 16.5 37 4.4 -- -- 5.4 pF pF pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 3.0 W, IDQ = 50 mA) Drain Efficiency (VDD = 7.5 Vdc, Pout = 3.0 W, IDQ = 50 mA) Gps f = 512 MHz f = 175 MHz h f = 512 MHz f = 175 MHz 45 -- 50 55 -- -- 9.5 -- 10.5 15 -- -- % dB
MRF5003 2
MOTOROLA RF DEVICE DATA
VGG C10
R3 C12 C11 R4 R2 C13
B1 VDD C14 L2 C15 RF Z12 OUTPUT C9
RF INPUT
Z1 C1
Z2 C2
Z3 C3
C4 Z4
C5 Z5 R1
L1 Z6
Z7 D.U.T.
Z8
Z9 C6
Z10 C7
Z11 C8
C1, C3, C7, C8 0 to 20 pF Johanson C2, C9 56 pF, 100 mil Chip C4 10 pF, 100 mil Chip C5 47 pF, Miniature Clamped Mica Capacitor C6 22 pF, 100 mil Chip C10, C15 10 F, 50 V, Electrolytic C11, C14 0.1 F, Capacitor C12 1000 pF, 100 mil Chip C13 160 pF, 100 mil Chip R1 35 , 1/4 W Carbon R2 30 , 0.1 W Chip R3 1.0 k, 0.1 W Chip R4 1.0 M, 1/4 W Carbon B1 Fair Rite Products Short Ferrite Bead (2743021446) Board -- Glass Teflon(R), 31 mils Note: Plated ceramic part locators (0.1 x 0.15) soldered onto Z6 and Z7.
Z1 0.350 x 0.08 Microstrip Z2 0.190 x 0.08 Microstrip Z3 0.800 x 0.08 Microstrip Z4 0.380 x 0.08 Microstrip Z5 0.150 x 0.08 Microstrip Z6 0.285 x 0.08 Microstrip Z7 0.340 x 0.08 Microstrip Z8 0.070 x 0.08 Microstrip Z9 0.280 x 0.08 Microstrip Z10 0.840 x 0.08 Microstrip Z11 0.180 x 0.08 Microstrip Z12 0.600 x 0.08 Microstrip L1 7 Turns, 0.076 ID, #24 AWG Enamel L2 5 Turns, 0.126 ID, #20 AWG Enamel Input/Output Connectors -- Type N
Figure 1. 512 MHz Narrowband Test Circuit
TYPICAL CHARACTERISTICS
5 f = 400 MHz P out , OUTPUT POWER (WATTS) 4 470 MHz 520 MHz 3 P out , OUTPUT POWER (WATTS) 8 470 MHz 520 MHz 10 f = 400 MHz
6
2 VDD = 7.5 V IDQ = 50 mA
4 VDD = 12.5 V IDQ = 50 mA
1
2
0 0 100 200 300 400 500 Pin, INPUT POWER (MILLIWATTS)
0 0 100 200 300 400 500 Pin, INPUT POWER (MILLIWATTS)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
MRF5003 3
TYPICAL CHARACTERISTICS
10 P out , OUTPUT POWER (WATTS) f = 400 MHz ID = 50 mA P out , OUTPUT POWER (WATTS) Pin = 300 mW 10 f = 470 MHz ID = 50 mA Pin = 300 mW
8
8
6
200 mW
6
200 mW
4
100 mW
4
100 mW
2
2
0 6 8 10 VDD, SUPPLY VOLTAGE 12 14
0 6 8 10 VDD, SUPPLY VOLTAGE 12 14
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
10 P out , OUTPUT POWER (WATTS) f = 520 MHz ID = 50 mA P out , OUTPUT POWER (WATTS)
5 VDD = 7.5 V Pin = 0.3 W f = 470 MHz
8
Pin = 300 mW
4
6
200 mW
3
4
100 mW
2 TYPICAL DEVICE SHOWN VGS(th) = 2.4 V
2
1
0 6 8 10 VDD, SUPPLY VOLTAGE 12 14
0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Gate Voltage
1000 I D, DRAIN CURRENT (MILLIAMPS) VDS = 10 V C, CAPACITANCE (pF)
125 VGS = 0 V f = 1.0 MHz
800
100
600
75
400
50
Coss Ciss Crss
200
25
0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (VOLTS)
0 0 2 4 6 8 10 12 14 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain Current versus Gate Voltage (Typical Device Shown)
Figure 9. Capacitance versus Voltage
MRF5003 4
MOTOROLA RF DEVICE DATA
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.06 1.04 ID, DRAIN CURRENT (AMPS) 1.02 1.00 0.98 0.96 0.94 0.92 0.90 0.88 0.86 -25 VDD = 12.5 V 25 mA IDQ = 150 mA 75 mA
2
1.5 TC = 25C
1
0.5
0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C)
1
10 36 V VDS, DRAIN SOURCE VOLTAGE (VOLTS)
100
Figure 10. Gate-Source Voltage versus Case Temperature
Figure 11. Maximum Rated Forward Biased Safe Operating Area
VDD = 7.5 V, IDQ = 50 mA, Pout = 3.0 W f MHz 520 MHz 460 MHz ZOL* f = 400 MHz 400 430 460 490 520 Zin Ohms 2.8 - j9.2 2.7 - j8.5 2.5 - j7.8 2.0 - j7.2 1.3 - j6.5 ZOL* Ohms 3.6 - j1.7 3.3 - j1.5 2.7 - j1.1 2.5 - j0.8 2.4 - j0.5
520 MHz
Zin
Zin = Conjugate of source impedance with parallel 35 Zin = resistor and 47 pF capacitor in series with gate. 460 MHz Zo = 10 ZOL* = Conjugate of the load impedance at given output ZOL* = power, voltage, frequency, and D > 50%.
f = 400 MHz
Note: Zol* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5003 5
Table 1. Common Source Scattering Parameters (VDS = 10 V) ID = 50 mA
f MHz 50 100 200 300 400 500 700 850 1000 |S11| 0.69 0.58 0.58 0.64 0.70 0.75 0.82 0.86 0.89 S11 - 90 - 120 - 139 - 147 - 152 - 157 - 165 - 171 - 176 |S21| 10.8 6.0 3.0 1.9 1.3 0.99 0.61 0.45 0.34 S21 117 96 75 61 50 41 28 21 16 |S12| 0.07 0.08 0.08 0.07 0.06 0.05 0.03 0.02 0.02 S12 - 29 - 10 -7 - 16 - 21 - 24 - 15 - 13 - 47 |S22| 0.74 0.78 0.81 0.84 0.86 0.88 0.92 0.94 0.95 S22 - 119 - 146 - 161 - 166 - 169 - 172 - 176 - 179 - 178
ID = 500 mA
f MHz 50 100 200 300 400 500 700 850 1000 |S11| 0.76 0.72 0.72 0.73 0.75 0.77 0.81 0.84 0.86 S11 - 124 - 150 - 163 - 168 - 171 - 173 - 177 - 180 - 177 |S21| 15.0 7.9 4.0 2.6 1.9 1.5 0.97 0.75 0.60 S21 109 94 80 71 62 55 42 35 29 |S12| 0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.03 0.04 S12 23 12 6 5 7 12 29 44 55 |S22| 0.76 0.81 0.83 0.84 0.85 0.86 0.89 0.90 0.92 S22 - 151 - 165 - 172 - 175 - 176 - 178 - 180 - 178 - 176
ID = 1.0 A
f MHz 50 100 200 300 400 500 700 850 1000 |S11| 0.80 0.76 0.76 0.77 0.79 0.80 0.83 0.85 0.87 S11 - 125 - 150 - 164 - 169 - 172 - 174 - 178 - 179 - 177 |S21| 14.6 7.8 3.9 2.6 1.9 1.4 0.95 0.73 0.58 S21 110 95 81 71 63 56 43 35 28 |S12| 0.04 0.04 0.04 0.04 0.03 0.03 0.03 0.02 0.02 S12 - 23 - 10 -1 -3 -5 -5 -1 -9 - 22 |S22| 0.75 0.81 0.83 0.84 0.85 0.86 0.88 0.90 0.91 S22 - 155 - 167 - 173 - 175 - 176 - 177 - 179 - 179 - 178
MRF5003 6
MOTOROLA RF DEVICE DATA
R3 C13 R2 C12 C10 RF INPUT C11 R1 Z6
R4 VDD D1 B1 C14 Z7 D.U.T. L1 Z8 C5 Z9 C6 Z10 C7 Z11 C8 Z12 C9 C15 C16
RF Z13 OUTPUT
Z1 C1
Z2 C2
Z3 C3
Z4 C4
Z5
C1, C9 C2 C3 C4 C5 C6 C7 C8 C10, C15 C11, C16 C12 B1
100 pF 100 mil Chip 16 pF, 100 mil Chip 24 pF, 100 mil Chip 68 pF, 100 mil Chip 51 pF, 100 mil Chip 39 pF, 100 mil Chip 6.2 pF, 100 mil Chip 9.1 pF, 100 mil Chip 39000 pF, 100 mil Chip 10 F, 50 V Electrolytic 10000 pF, 100 mil Chip Fair Rite Products Short Ferrite Bead (2743021446)
C13 0.1 F, 100 mil Chip C14 160 pF, 100 mil Chip R1 43 , 0.1 W Chip Resistor R2 1000 , 0.1 W Chip Resistor R3 10 k Potentiometer R4 3000 , 0.1 W Chip Resistor L1 5 Turns, 0.126 ID, #20 AWG Enamel Z1 to Z13 See Photomaster D1 1N4734 Motorola Zener Board -- G10, 1/32 Input/Output Connectors -- SMA
Figure 13. Schematic of Broadband Demonstration Amplifier
MOTOROLA RF DEVICE DATA
MRF5003 7
PERFORMANCE CHARACTERISTICS OF BROADBAND DEMONSTRATION AMPLIFIER
, DRAIN EFFICIENCY (%) VSWR 5 P out , OUTPUT POWER (WATTS) P out , OUTPUT POWER (WATTS) f = 400 MHz 470 MHz 5 60 55 50 Po 3 45 40 35 2 VSWR 1 30
4
4
3
2 VDD = 7.5 V IDQ = 50 mA
1.75 1.50 1.25
1
0 0 200 400 600 800 1000 1200 Pin, INPUT POWER (MILLIWATTS)
0 400
410
420
430
440
450
460
1.00 470
f, FREQUENCY (MHz)
Figure 14. Output Power versus Input Power
Figure 15. Output Power, Drain Efficiency and VSWR versus Frequency
5 P out , OUTPUT POWER (WATTS) VDD = 7.5 V Pin = 0.3 W
4
f = 400 MHz 470 MHz
3
2 TYPICAL DEVICE SHOWN VGS(th) = 2.4 V
1
0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 16. Output Power versus Gate Voltage
MRF5003 8
MOTOROLA RF DEVICE DATA
DESIGN CONSIDERATIONS The MRF5003 is a common-source, RF power, N-Channel enhancement mode, Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. The major advantages of RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (C gs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (C ds). These capacitances are characterized as input (C iss), output (C oss) and reverse transfer (C rss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The C iss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications.
The input resistance is very high -- on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, V GS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended with appropriate RF decoupling. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since the MRF5003 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. See Figure 8 for a typical plot of drain current versus gate voltage. RF power FETs operate optimally with a quiescent drain current (I DQ), whose value is application dependent. The MRF5003 was characterized at I DQ = 50 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF5003 may be controlled from its rated value down to zero (negative gain) with a low power dc control signal, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. Figure 16 is an example of output power variation with gate-source bias voltage. This characteristic is very dependent on frequency and load line. MOUNTING The specified maximum thermal resistance of 14C/W assumes a majority of the 0.100 x 0.200 source contact on the back side of the package is in good contact with an appropriate heat sink. In the test fixture shown in Figure 1, the device is clamped directly to a copper pedestal. In the demonstration amplifier, the device was mounted on top of the G10 circuit board and heat removal was accomplished through several solder filled plated through holes. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package.
DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
SOURCE
DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed V DS(on). For MOSFETs, V DS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide.
MOTOROLA RF DEVICE DATA
MRF5003 9
AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF5003. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors". Both small-signal S-parameters and large-signal impedances are provided. While the S-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF power MOSFETs. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of the MRF5003 yield a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. Different stabilizing techniques were applied to the test fixture and demonstration amplifiers. The RF test fixture implements a parallel resistor and capacitor in series with the gate while the demonstration amplifier utilizes a 43 shunt resistor from gate to ground. Both circuits have a load line selected for a higher efficiency, lower gain, and more stable operating region. Two port stability analysis with the MRF5003 S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters", for a discussion of two port network theory and stability.
PACKAGE DIMENSIONS
SEATING PLANE
C
2
G
3
A
N
1
R B
E
CASE 430-01 ISSUE O
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
MRF5003 10
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NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G L N R S INCHES MIN MAX 0.260 0.270 0.200 0.210 0.090 0.104 0.040 0.050 0.022 0.028 0.015 0.025 0.005 0.015 0.100 0.110 0.226 0.236 0.166 0.176 0.025 0.035 MILLIMETERS MIN MAX 6.60 6.86 5.08 5.33 2.29 2.64 1.02 1.27 0.56 0.71 0.38 0.64 0.13 0.38 2.54 2.79 5.74 5.99 4.22 4.47 0.64 0.89
D
1
L
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE
*MRF5003/D*
MRF5003/D MOTOROLA RF DEVICE DATA

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